IPP024N06N3 G دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
IPP024N06N3 G
|
|
حجم فایل
|
64.354
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
11
|
مشخصات فنی
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Infineon Technologies IPP024N06N3 G
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
250W
-
Total Gate Charge (Qg@Vgs):
275nC@10V
-
Drain Source Voltage (Vdss):
60V
-
Input Capacitance (Ciss@Vds):
23000pF@30V
-
Continuous Drain Current (Id):
120A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@196uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
2.4mΩ@10V,100A
-
Package:
TO-220
-
Manufacturer:
Infineon Technologies
